收藏本站
DMN2005K
Maximum Ratings
@T A = 25°C unless otherwise specified
Drain-Source Voltage
Gate-Source Voltage
Characteristic
Symbol
V DSS
V GSS
Value
20
? 10
Unit
V
V
Drain Current per element (Note 5)
Continuous
Pulsed (Note 6)
I D
300
600
mA
Thermal Characteristics
@T A = 25°C unless otherwise specified
Characteristic
Total Power Dissipation (Note 5)
Thermal Resistance, Junction to Ambient
Operating and Storage Temperature Range
Symbol
P D
R θ JA
T j , T STG
Value
350
357
-65 to +150
Unit
mW
°C/W
°C
Electrical Characteristics
@T A = 25°C unless otherwise specified
Characteristic
Symbol
Min
Typ
Max
Unit
Test Condition
OFF CHARACTERISTICS (Note 7)
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate-Source Leakage
BV DSS
I DSS
I GSS
20
?
?
?
?
?
?
10
? 5
V
μA
μA
V GS = 0V, I D = 100μA
V DS = 17V, V GS = 0V
V GS = ? 8V, V DS = 0V
ON CHARACTERISTICS (Note 7)
Gate Threshold Voltage
Static Drain-Source On-Resistance
Forward Transfer Admittance
V GS(th)
R DS (ON)
? Y fs ?
0.53 ?
??
?
40
?
0.55
0. ?
?
0.9
3.5
1.7
?
V
?
mS
V DS = V GS , I D = 100μA
V GS = 1.8V, I D = 200mA
V GS = 2.7V, I D = 200mA
V DS = 3V, I D = 10mA
Notes:
5. Device mounted on FR-4 PCB.
6. Pulse width ? 10 μ S, Duty Cycle ? 1%.
7. Short duration pulse test used to minimize self-heating effect.
DMN2005K
Document number: DS30734 Rev. 7 - 2
2 of 6
www.diodes.com
November 2013
? Diodes Incorporated
发布紧急采购，3分钟左右您将得到回复。

采购需求

(若只采购一条型号，填写一行即可)

发布成功！您可以继续发布采购。也可以进入我的后台，查看报价

发布成功！您可以继续发布采购。也可以进入我的后台，查看报价

*型号 *数量 厂商 批号 封装
添加更多采购

我的联系方式

*
*
*
相关PDF资料
DMN2005LP4K-7 MOSFET N-CH 20V 200MA 3-DFN
DMN2005LPK-7 MOSFET N-CH 20V 440MA 3-DFN
DMN2009LSS-13 MOSFET N-CH 20V 12A 8-SOIC
DMN2013UFDE-7 MOSF N CH 20V 10.5A U-DFN2020-6
DMN2015UFDE-7 MOSF N CH 20V 10.5A U-DFN2020-6E
DMN2016LFG-7 MOSFET N CH DUAL 20V 5.2A
DMN2016UTS-13 MOSFET N-CH 20V 8.58A 8-TSSOP
DMN2019UTS-13 MOSFET 2N-CH 20V 5.4A TSSOP-8
相关代理商/技术参数
DMN2005LP4K 制造商:DIODES 制造商全称:Diodes Incorporated 功能描述:N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR
DMN2005LP4K_09 制造商:DIODES 制造商全称:Diodes Incorporated 功能描述:N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR
DMN2005LP4K-7 功能描述:MOSFET 30V 300mA RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube
DMN2005LP4K-7-01 制造商:Diodes Incorporated 功能描述:MOSFET DUAL N-CHANNEL SOT-363 GREEN 3K - Tape and Reel
DMN2005LPK 制造商:DIODES 制造商全称:Diodes Incorporated 功能描述:N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR
DMN2005LPK_0710 制造商:DIODES 制造商全称:Diodes Incorporated 功能描述:N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR
DMN2005LPK-7 功能描述:MOSFET 20V 200mA RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube
DMN2009LSS 制造商:DIODES 制造商全称:Diodes Incorporated 功能描述:5SINGLE N-CHANNEL ENHANCEMENT MODE MOSFET